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gallium nitride-high electron mobility transistor

World’s First Multi-Cell GaN-HEMT Bonded Directly to Diamond Substrate Will Increase Energy Efficiency and Reliability of Microwave Electronics in Diverse Fields

September 2, 2019 By Technologies.org Leave a Comment

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that in collaboration with the Research Center for Ubiquitous MEMS and Micro Engineering, National Institute of Advanced Industrial Science and Technology (AIST), it has developed a gallium nitride-high electron mobility transistor (GaN-HEMT) in a multi-cell structure (multiple transistors cells arranged in parallel) … [Read more...] about World’s First Multi-Cell GaN-HEMT Bonded Directly to Diamond Substrate Will Increase Energy Efficiency and Reliability of Microwave Electronics in Diverse Fields

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